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Resistive switching transparent SnO2 thin film sensitive to light and humidity - Scientific Reports

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Resistive switching transparent SnO2 thin film sensitive to light and humidity - Scientific Reports

Designing and manufacturing memristor devices with simple and less complicated methods is highly promising for their future development. Here, an Ag/SnO2/FTO(F-SnO2) structure is used through the deposition of the SnO2 layer attained by its sol via the air-brush method on an FTO substrate. This structure was investigated in terms of the memristive characteristics. The negative differential resistance (NDR) effect was observed in environment humidity conditions.

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Resistive switching transparent SnO2 thin film sensitive to light and humidity - Scientific Reports

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Resistive switching transparent SnO2 thin film sensitive to light and humidity - Scientific Reports

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