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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices - Scientific Reports

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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices - Scientific Reports

Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities still represents a challenge. In this work, we analyse the effect of electrode metals on resistive switching functionalities of NbOx-based memristive cells.

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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices - Scientific Reports

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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices - Scientific Reports

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