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Controlled formation of three-dimensional cavities during lateral epitaxial growth - Nature Communications

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Controlled formation of three-dimensional cavities during lateral epitaxial growth - Nature Communications

Epitaxial growth is a fundamental step required to create devices for the semiconductor industry, enabling different materials to be combined in layers with precise control of strain and defect structure. Patterning the growth substrate with a mask before performing epitaxial growth offers additional degrees of freedom to engineer the structure and hence function of the semiconductor device.

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Controlled formation of three-dimensional cavities during lateral epitaxial growth - Nature Communications

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Controlled formation of three-dimensional cavities during lateral epitaxial growth - Nature Communications

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