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The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization - NPG Asia Materials

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The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization - NPG Asia Materials

The discovery of efficient magnetization switching upon device activation by spin Hall effect (SHE)-induced spin–orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for electronic systems with perpendicular magnetic anisotropy (PMA), the use of SOT is still hampered by the necessity of a longitudinal magnetic field to break magnetic symmetry and achieve deterministic switching.

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The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization - NPG Asia Materials

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The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization - NPG Asia Materials

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