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Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography - Nature Electronics

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Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography - Nature Electronics

Field-effect transistors based on two-dimensional materials are a potential replacement for silicon-based devices in next-generation semiconductor chips. However, the weak interfacial adhesion energy between two-dimensional materials and substrates can lead to low yields and non-uniform transistors on the wafer scale. Furthermore, conventional photolithography processes—including photochemical reactions and chemical etching—can damage atomically thin materials.

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Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography - Nature Electronics

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Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography - Nature Electronics

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