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Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide - Nature Electronics

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Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide - Nature Electronics

Complementary field-effect transistors—which have n-type and p-type field-effect transistors (FETs) vertically stacked on top of each other—can boost area efficiency in integrated circuits. However, silicon-based complementary FETs suffer from several issues, including difficulty in balancing electron and hole mobility.

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Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide - Nature Electronics

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Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide - Nature Electronics

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