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Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions - Communications Materials

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Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions - Communications Materials

Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage.

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Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions - Communications Materials

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Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions - Communications Materials

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