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Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors - Scientific Reports

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Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors - Scientific Reports

This paper examined the effects of no treatment versus plasma treatment, and femtosecond laser irradiation as pre-annealing processes on indium zinc oxide (IZO) films and annealing at high temperatures. The plasma pre-annealed multilayer stacked IZO TFTs showed better electrical properties with mobility enhancement from 2.45 to 7.81 cm2/Vs, but exhibited diminished on–off current ratio (Ion/Ioff).

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Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors - Scientific Reports

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Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors - Scientific Reports

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