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Producing ultrathin monocrystalline native oxide dielectrics for 2D transistors - Nature Electronics
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A monocrystalline native oxide dielectric, β-Bi2SeO5, with a high dielectric constant has been synthesized by oxidizing a two-dimensional (2D) semiconductor, Bi2O2Se. In 2D transistors, the ultrathin β-Bi2SeO5 dielectric demonstrates sub-0.5-nm equivalent oxide thickness and leakage current below the low-power limit, meeting the requirements of the International Roadmap for Devices and Systems.
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